Semiconductor device having an extra low-k dielectric layer and method of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsPo-Cheng Shih, Chia Cheng Chou, Li Chun Te
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Abstract
A method for manufacturing an extra low-k (ELK) inter-metal dielectric (IMD) layer includes forming a first IMD layer including a plurality of dielectric material layers over a substrate. An adhesion layer is formed over the first IMD layer. An ELK dielectric layer is formed over the adhesion layer. A protection layer is formed over the ELK dielectric layer. A hard mask is formed over the protection layer and is patterned to create a window. Layers underneath the window are removed to create an opening. The removed layers include the protection layer, the ELK dielectric layer, the adhesion layer, and the first IMD layer. A metal layer is formed in the opening.
Claims20
A method for manufacturing an extra low-k (ELK) inter-metal dielectric (IMD) layer, comprising:
- forming a first IMD layer comprising a plurality of dielectric material layers over a substrate, at least one of the plurality of dielectric material layers comprising aluminum and at least one of the plurality of dielectric material layers comprising oxygen doped carbide;
- forming an adhesion layer over the first IMD layer;
- forming an ELK dielectric layer over the adhesion layer;
- forming a protection layer over the ELK dielectric layer;
- forming a hard mask over the protection layer and patterning the hard mask to create a window;
- removing layers underneath the window to create an opening, wherein the removed layers includes the protection layer, the ELK dielectric layer, the adhesion layer, and the first IMD layer;
- and
- forming a metal layer in the opening, wherein the plurality of dielectric material layers comprise an aluminum nitride (AlN) layer, a first oxygen doped carbide (ODC) layer, an aluminum oxide (Al2O3) layer, and a second ODC layer.
A method for manufacturing an integrated circuit, comprising:
- forming a plurality of devices over a substrate to create an in-process substrate;
- and
- implementing conductive power and signal routing interconnections for the plurality of devices by creating back-end-of-line (BEOL) metal and dielectric layers by:
- forming an inter-metal dielectric (IMD) layer over the in-process substrate, the IMD layer comprising a plurality of dielectric material layers, at least one of the plurality of dielectric material layers comprising aluminum and at least one of the plurality of dielectric material layers comprising oxygen doped carbide;
- forming an extra low-k (ELK) dielectric layer over the IMD layer;
- forming a dielectric cap over the ELK dielectric layer;
- forming a hard mask including titanium nitride (TiN) over the dielectric cap and patterning the hard mask to create a window;
- removing layers underneath the window to create a trench, the removed layers including the dielectric cap, the ELK dielectric layer, and the IMD layer;
- and
- forming a metal layer including copper (Cu) in the trench, wherein the ELK dielectric layer comprises a carbon-doped oxygen-rich silicon oxide material formed using a chemical vapor deposition (PECVD) or a physical vapor deposition (PVD) process.
A semiconductor device, comprising:
- an IMD layer formed over an in-process substrate, the IMD layer comprising a plurality of dielectric material layers that comprises an aluminum nitride (AlN) layer, a first oxygen doped carbide (ODC) layer, an aluminum oxide (Al2O3) layer, and a second ODC layer;
- an adhesion layer including one of silicon oxide (SiO2) or silicon oxycarbide (SiOC) formed over the IMD layer;
- an ELK dielectric layer comprising carbon-doped oxygen-rich silicon oxide material formed over the adhesion layer;
- a protection layer formed over the ELK dielectric layer;
- and
- a metal layer extending from the ELK dielectric layer to the IMD layer.
Dependencies are inferred from the claim text.