US 10,707,157 B2Granted

Semiconductor device package

AssigneeAdvanced Semiconductor Engineering, Inc.

InventorsHui Hua Lee, Chun Hao Chiu, Hui-Ying Hsieh, Kuo-Hua Chen, Chi-Tsung Chiu

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Abstract

A semiconductor device package includes a first conductive base, a first insulation layer and a second insulation layer. The first conductive base has a first surface, a second surface opposite to the first surface and a lateral surface extended between the first surface and the second surface. The lateral surface includes a first portion adjacent to the first surface and a second portion adjacent to the second surface. The first insulation layer comprises a first insulation material. The first insulation layer has a first surface and a second surface opposite to the first surface. The first insulation layer covers the first portion of the lateral surface of the first conductive base. The second insulation layer comprises a second insulation material and covers the second portion of the lateral surface of the first conductive base. The first insulation material is different from the second insulation material.

Claims14

Dependent claims

A semiconductor device package, comprising:

a first conductive base having a first surface, a second surface opposite to the first surface, a first lateral surface and a second lateral surface extended between the first surface and the second surface, wherein the first lateral surface includes a first portion adjacent to the first surface of the first conductive base and a second portion adjacent to the second surface of the first conductive base, wherein the second lateral surface includes a first portion adjacent to the first surface of the first conductive base and a second portion adjacent to the second surface of the first conductive base;
a first insulation layer comprising a first insulation material, the first insulation layer having a first surface and a second surface opposite to the first surface, wherein the first insulation layer covers the first portion of the first lateral surface of the first conductive base, the first portion of the second lateral surface of the first conductive base, and the second portion of the second lateral surface of the first conductive base;
a second insulation layer comprising a second insulation material and covering the second portion of the first lateral surface of the first conductive base, wherein the first insulation material is different from the second insulation material;
a first die disposed on the first surface of the first conductive base;
and
a patterned conductive layer disposed on the first insulation layer and electrically connected to the first die,
wherein the first insulation layer further covers at least a portion of the first die and the first surface of the first conductive base.

4 more elements

A semiconductor device package, comprising:

a conductive base having a first surface, a second surface opposite to the first surface a first lateral surface and a second lateral surface extended between the first surface and the second surface, wherein the first lateral surface includes a first portion adjacent to the first surface of the conductive base and a second portion adjacent to the second surface of the conductive base, wherein the second lateral surface includes a first portion adjacent to the first surface of the conductive base and a second portion adjacent to the second surface of the conductive base;
a first insulation layer comprising a first insulation material and covering the first portion of the first lateral surface of the conductive base, the first portion of the second lateral surface of the conductive base and the second portion of the second lateral surface of the conductive base;
a second insulation layer comprising a second insulation material and covering the second portion of the first lateral surface of the conductive base, wherein the first insulation material is different from the second insulation material;
a die;
and
a patterned conductive layer disposed on the first insulation layer and electrically connected to the die,
wherein the conductive base defines a cavity in the first surface of the conductive base, the cavity has a bottom surface, the die is disposed on the bottom surface of the cavity, and the first insulation layer further covers at least a portion of the die and the first surface of the conductive base.

4 more elements

Dependencies are inferred from the claim text.

Facts

Application: 15/621,970Filed 13 Jun 2017 · us provisional application
Priority: 15 Jun 2016
Published: US 2017/0365543 A121 Dec 2017
Granted: 7 Jul 2020
Term ends: Not estimatedThe source records don’t support an estimate.

Classification38 codes

H10W 90/811
Package configurations: multiple chips on leadframes
H10W 70/05
Manufacture or treatment: of insulating or insulated package substrates, or of interposers, or of redistribution layers
H10W 70/095
Of insulating or insulated package substrates, or of interposers, or of redistribution layers: of vias therein
H10W 70/417
Chip-supporting parts, e.g. die pads: bonding materials between chips and die pads