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US 10,707,155 B2Granted
Semiconductor device with a bridge insulation layer
AssigneeRohm Co., Ltd.
InventorsHajime Okuda, Yoshinori Fukuda
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a semiconductor layer that has a main surface including a defined region defined by a trench, a trench insulation layer formed in the trench, a field insulation layer that covers the defined region away from the trench, and a bridge insulation layer that is formed in a region between the trench and the field insulation layer in the defined region and that is connected to the trench insulation layer and to the field insulation layer.
Claims17
A semiconductor device comprising:
- a semiconductor layer that has a main surface including a defined region defined by a trench;
- a trench insulation layer formed in the trench;
- a field insulation layer that covers the defined region away from the trench;
- and
- a bridge insulation layer that is formed in a region between the trench and the field insulation layer in the defined region and that is connected to the trench insulation layer and to the field insulation layer,
- wherein a plurality of contact openings, each of which exposes a surface of the semiconductor layer, is formed in the bridge insulation layer around the field insulation layer.
3 more elements
A semiconductor device comprising:
- a semiconductor layer that has a main surface including a defined region defined by a trench;
- a trench insulation layer formed in the trench;
- a field insulation layer that covers the defined region away from the trench;
- and
- a bridge insulation layer that is formed in a region between the trench and the field insulation layer in the defined region and that is connected to the trench insulation layer and to the field insulation layer,
- wherein the bridge insulation layer includes a pair of first connection parts that sandwich both sides of the field insulation layer from a first direction and a pair of second connection parts that sandwich both sides of the field insulation layer from a second direction that intersects the first direction.
3 more elements
A semiconductor device comprising:
- a semiconductor layer that has a main surface including a defined region defined by a trench;
- a trench insulation layer formed in the trench;
- a field insulation layer that covers the defined region away from the trench;
- and
- a bridge insulation layer that is formed in a region between the trench and the field insulation layer in the defined region and that is connected to the trench insulation layer and to the field insulation layer,
- wherein an opening is formed in an inward portion of the field insulation layer,
- wherein the defined region is an active region including a transistor of an insulated-gate type, and
- a gate insulating layer of the transistor is formed in the opening of the field insulation layer.
5 more elements
A semiconductor device, comprising:
- a semiconductor layer that has a main surface including a defined region defined by a trench;
- a trench insulation layer formed in the trench;
- a field insulation layer that covers the defined region away from the trench;
- and
- a bridge insulation layer that is formed in a region between the trench and the field insulation layer in the defined region and that is connected to the trench insulation layer and to the field insulation layer;
- a contact region formed in a region between the trench and the field insulation layer in a surface layer portion of the semiconductor layer;
- and
- a contact electrode connected to the contact region in the main surface of the semiconductor layer.
5 more elements
Dependencies are inferred from the claim text.