Through silicon via structure and method for manufacturing the same
AssigneeNanya Technology Corporation
InventorTing-Cih Kang
Life of this patent
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Abstract
The present disclosure provides a through silicon via structure and a method for manufacturing the same. The through silicon via structure includes a semiconductor substrate, a shaping film, a conductive line, a barrier layer, and an insulating layer. The shaping film is disposed over a back surface of the semiconductor substrate, and is configured to maintain a planar formation of the semiconductor substrate. The conductive line is disposed through the shaping film and in the semiconductor substrate. The barrier layer surrounds the conductive line, and the insulating layer surrounds the barrier layer.
Claims14
A through silicon via structure, comprising:
- a semiconductor substrate;
- a shaping film disposed over a back surface of the semiconductor substrate, and configured to maintain a planar formation of the semiconductor substrate;
- a conductive line disposed through the shaping film and in the semiconductor substrate;
- a barrier layer surrounding the conductive line;
- and
- an insulating layer at least surrounding a portion of the barrier layer;
- wherein the shaping film comprises a tensile material and applies tension to the semiconductor substrate when the semiconductor substrate bulges toward a front surface opposite to the back surface due to warping;
- wherein the shaping film comprises gallium nitride.
A through silicon via structure, comprising:
- a semiconductor substrate;
- a shaping film disposed over a back surface of the semiconductor substrate, and configured to maintain a planar formation of the semiconductor substrate;
- a conductive line disposed through the shaping film and in the semiconductor substrate;
- a barrier layer surrounding the conductive line;
- and
- an insulating layer at least surrounding a portion of the barrier layer;
- wherein a first end surface of the conductive line and a terminal surface of the barrier layer are coplanar with a lower surface, away from the back surface, of the shaping film;
- wherein the insulating layer is a deposition layer and a terminal surface of the insulating layer is coplanar with the lower surface.
A method for manufacturing a through silicon via structure, comprising:
- providing a semiconductor substrate;
- depositing a shaping film over a back surface of the semiconductor substrate;
- forming a hole through the shaping film and in the semiconductor substrate, wherein the step of forming the hole through the shaping film and in the semiconductor substrate comprises:
- providing a patterned photoresist over the shaping film;
- and etching unnecessary portions of the shaping film and the semiconductor substrate away by using the patterned photoresist as a mask;
- forming an insulating layer in the hole;
- depositing a barrier layer over the insulating layer;
- depositing a conductive material in the hole;
- and
- removing the patterned photoresist after the depositing of the conductive material.
Dependencies are inferred from the claim text.