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US 10,707,149 B2Granted
Through-silicon via with low-K dielectric liner
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorMing-Fa Chen
Life of this patent
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Abstract
A semiconductor substrate having a through-silicon via with an air gap interposed between the through-silicon via and the semiconductor substrate is provided. An opening is formed partially through the semiconductor substrate. The opening is first lined with a first liner and then the opening is filled with a conductive material. A backside of the semiconductor substrate is thinned to expose the first liner, which is subsequently removed and a second liner formed with a low-k or extra low-k dielectric is formed in its place.
Claims21
A method of forming a semiconductor device, the method comprising:
- forming an opening extending from a first major surface of a substrate and extending partly through the substrate;
- lining the opening with a first liner;
- filling the lined opening with a conductor, the conductor extending over the first major surface and electrically contacting a contact formed on the first major surface;
- thinning a second major surface of the substrate, opposite the first major surface, to expose the conductor and the first liner;
- removing at least a portion of the first liner to form an air gap surrounding at least a first portion of the conductor, the air gap extending between the first major surface and the second major surface of the substrate;
- and
- forming a second liner in the air gap.
4 more elements
A method comprising:
- forming a circuit on a first surface of a substrate, the circuit including a contact pad;
- patterning the substrate to include an opening extending at least partially through the substrate;
- lining the opening with a first liner;
- filling the lined opening with a conductor material to form a through substrate via (TSV) structure, wherein the conductor material extends over the substrate to contact the contact pad;
- thinning a second surface of the substrate to expose the first liner;
- removing a portion of the first liner to form an air gap around the TSV structure;
- and
- filling the air gap with a second liner, the second liner comprising a first portion and a second portion, the first portion extending along the second surface of the substrate, the second portion extending along sidewalls of the TSV structure from a lower region below a plane of the thinned second surface of the substrate to an upper region above the plane of the thinned second surface of the substrate, wherein the second liner has a substantially uniform thickness along sidewalls of the TSV structure.
5 more elements
A semiconductor device comprising:
- a substrate;
- a first dielectric layer disposed over a circuit side of the substrate, the first dielectric layer comprising an upper surface facing away from the substrate;
- a second dielectric layer, the second dielectric layer being interposed between the first dielectric layer and the circuit side of the substrate;
- a contact pad disposed over and contacting the upper surface of the first dielectric layer;
- a through via conductor comprising a first portion and a second portion, the first portion extending from the upper surface of the first dielectric layer through the substrate and to a back side of the substrate, the first portion comprising a first sidewall extending along the first portion, the second portion extending along the upper surface of the first dielectric layer in a direction parallel to the plane of the circuit side, the first portion and the second portion comprising a material that is continuous from within the first portion to within the second portion, the material continuously extending between the first sidewall and an opposing second sidewall of the first portion of the through via conductor, the contact pad interposed between the substrate and a surface of the second portion facing the substrate;
- and
- a liner directly interposed between the through via conductor and the upper surface of the first dielectric layer along a line parallel to the circuit side of the substrate, the liner comprising a first material, the liner extending along and contacting at least a portion of the back side of the substrate, the liner also extending along and contacting the first sidewall of the through via conductor at a first region contacting a sidewall of the first dielectric layer, at a second region contacting a sidewall of the substrate, and at a third region below the plane of the back side, the sidewall of the first dielectric layer at the first region being level with the sidewall of the substrate at the second region.
4 more elements
Dependencies are inferred from the claim text.