Elbow contact for field-effect transistor and manufacture thereof
AssigneeInternational Business Machines Corporation
InventorsGuy Cohen, Christian Lavoie, Ahmet Serkan Ozcan, Paul Solomon
Life of this patent
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Abstract
A field-effect transistor (FET) and method of manufacture thereof include patterning a mask above a source and drain of a FET to form holes in the mask, growing epitaxial structures from the holes in the mask, and growing a doped epitaxial shell to coat sidewalls of the epitaxial structures.
Claims5
A field-effect transistor (FET) including a planar source region and a planar drain region, the FET comprising:
- free-standing epitaxial pillars with a hollow core,
- wherein the pillars are cladded and grown from a surface of the planar source region and the planar drain region through an oxide layer.
A method of manufacture of a contact for a field-effect transistor (FET) including a planar source region and a planar drain region, and a semiconductor structure formed on a top of the planar source region and the planar drain region, the method comprising:
- increasing a contact area using a vertical dimension between gates to form an elbow contact by:
- growing free-standing epitaxial pillars with a hollow core, through an oxide layer, by patterning a mask over the planar source region and the planar drain region of the device;
- and
- during the growing, using a growth chamber to grow the pillars perpendicular to the semiconductor structure.
A method of manufacture of a contact for a field-effect transistor (FET), the method comprising:
- patterning a mask above a source and drain of a FET to form holes in said mask;
- growing epitaxial structures having a hollow core from the holes in said mask;
- and
- growing a doped epitaxial shell to coat sidewalls of the epitaxial structures.
Dependencies are inferred from the claim text.