Method for evaluating surface defects of substrate to be bonded
AssigneeShin-Etsu Handotai Co., Ltd.
InventorsKazuya Sato, Hiromasa Hashimoto, Tsuyoshi Nishizawa, Hirotaka Horie
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AssigneeShin-Etsu Handotai Co., Ltd.
InventorsKazuya Sato, Hiromasa Hashimoto, Tsuyoshi Nishizawa, Hirotaka Horie
Estimating the term…
A method for evaluating surface defects of a substrate to be bonded: preparing a mirror-polished silicon single crystal substrate; inspecting surface defects on the mirror-polished silicon single crystal substrate; depositing a polycrystalline silicon layer on a surface of the silicon single crystal substrate subjected to the defect inspection; performing mirror edge polishing to the silicon single crystal substrate having the polycrystalline silicon layer deposited thereon; polishing a surface of the polycrystalline silicon layer; inspecting surface defects on the polished polycrystalline silicon layer; and comparing coordinates of defects detected at the step of inspecting the surface defects on the silicon single crystal substrate with counterparts detected at the step of inspecting the surface defects on the polycrystalline silicone layer and determining quality of the silicon single crystal substrate having the polycrystalline silicon layer as a substrate to be bonded on the basis of presence/absence of defects present at the same position.
A method for evaluating surface defects of a substrate to be bonded, comprising the steps of:
Dependencies are inferred from the claim text.