Method for adjusting etching parameters
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKuo-Sheng Lien, Shih-Ta Yu
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Abstract
An etching method for an IC is provided. The etching method includes retrieving processing data including a pattern-density and at least one etching parameter of an etching process for a semiconductor device; determining end point time by consulting a table which records historical information of a plurality of PDs, the etching parameter and the EP time; compensating for the PD and the EP time by adjusting the etching parameter to perform the etching process; and performing the etching process on another semiconductor device based on the adjusted etching parameter, the PD and the EP time to manufacture the IC.
Claims20
An etching method for fabricating an integrated circuit (IC), comprising:
- retrieving processing data comprising a pattern-density (PD) and at least one etching parameter of an etching process of a thin film of a semiconductor device;
- determining end point (EP) time according to the PD for the semiconductor device, wherein the EP time is a period for etching the thin film of the semiconductor device;
- and
- adjusting the etching parameter of the thin film corresponding to the PD and the EP time;
- and
- performing the etching process on the thin film of the semiconductor device to manufacture the IC based on the etching parameter, the PD and the EP time.
An etching method for fabricating an integrated circuit (IC), comprising:
- retrieving processing data comprising a pattern-density (PD) and at least one etching parameter of an etching process for a semiconductor device;
- determining end point (EP) time by searching a table which records historical information of a plurality of PDs, the etching parameter and the EP time, wherein the EP time is a period to perform the etching process on a thin film of the semiconductor device, and the historical information are derived by previous lots of the etching process;
- compensating for the PD and the EP time by adjusting the etching parameter to perform the etching process;
- and
- executing the etching process for another semiconductor device based on the adjusted etching parameter, the PD and the EP time to manufacture the IC.
An etching method for fabricating an integrated circuit (IC), comprising:
- obtaining processing data comprising a pattern-density (PD) and at least one etching parameter of an etching process for a semiconductor device to determine an end point (EP) time by evaluating the PD for the semiconductor device, wherein the EP time is a period to perform the etching process on a thin film of the semiconductor device;
- compensating for the PD and the EP time by adjusting the etching parameter to perform the etching process;
- executing the etching process for another semiconductor device based on the adjusted etching parameter, the PD and the EP time to manufacture the IC;
- and
- verifying uniformity of the etching process by statistically analyzing a plurality of values of an evaluation parameter.
Dependencies are inferred from the claim text.