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US 10,707,135 B2Granted
Method for fabricating semiconductor device
AssigneeUnited Microelectronics Corp.
InventorsKuan-Hao Tseng, Chien-Ting Lin, Shih-Hung Tsai, Po-Kuang Hsieh, Yu-Ting Tseng, Chueh-Fei Tai, Cheng-Ping Kuo
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Abstract
A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first well in the substrate on the first region and a second well in the substrate on the second region; removing part of the first well to form a first recess; and forming a first epitaxial layer in the first recess.
Claims13
A method for fabricating semiconductor device, comprising:
- providing a substrate having a first region and a second region;
- forming a pad layer on the substrate;
- forming a first well in the substrate on the first region and a second well in the substrate on the second region;
- forming a first patterned mask on the pad layer;
- removing part of the pad layer and part of the first well to form a first recess before forming a gate structure, wherein a depth of the first recess below a top surface of the substrate is greater than half of a depth of the first well;
- removing the first patterned mask;
- forming a first epitaxial layer in the first recess;
- removing part of the first epitaxial layer to form fin-shaped structures on the first region, wherein a top surface of the fin-shaped structures is even with a top surface of the substrate;
- performing a planarizing process to remove part of the first epitaxial layer so that the top surfaces of the first epitaxial layer and the pad layer are coplanar;
- and
- removing the pad layer so that the top surfaces of the first epitaxial layer and the second well are coplanar.
8 more elements
A method for fabricating semiconductor device, comprising:
- providing a substrate having a first region and a second region;
- forming a first well in the substrate on the first region and a second well in the substrate on the second region;
- removing part of the first well to form a first recess before forming any gate structure, wherein a depth of the first recess below a top surface of the substrate is greater than half of a depth of the first well;
- forming a first epitaxial layer in the first recess;
- and
- removing part of the first epitaxial layer to form fin-shaped structures on the first region, wherein a top surface of the fin-shaped structures is even with a top surface of the substrate.
3 more elements
Dependencies are inferred from the claim text.