Field effect transistor devices with self-aligned source/drain contacts and gate contacts positioned over active transistors

A method of forming a transistor device, comprising:

• forming a plurality of gate structures including a gate spacer and a gate electrode on a substrate, wherein the plurality of gate structures are separated from each other by a source/drain contact;
• reducing the height of the gate electrodes to form gate troughs;
• forming a gate liner on the gate electrodes and gate spacers;
• forming a gate cap on the gate liner;
• reducing the height of the source/drain contacts between the gate structures to form a source/drain trough;
• forming a source/drain liner on the source/drain contacts and gate spacers, wherein the source/drain liner is selectively etchable relative to the gate liner;
• forming a source/drain cap on the source/drain liner;
• forming a patterned lower mask layer on the source/drain caps and gate caps, wherein a source/drain trench exposes a portion of each of the source/drain caps in a staggered arrangement;
• and
• removing the exposed portions of the source/drain caps, and the underlying portions of the source/drain liners.