Cyclic flowable deposition and high-density plasma treatment processes for high quality gap fill solutions

A method of processing a substrate, comprising:

• performing a deposition process by reacting a silicon-containing precursor with an oxygen-based radical precursor and a nitrogen-based radical precursor to form a flowable layer within a trench of a substrate;
• curing the flowable layer with UV energy in an oxygen-containing ambient, a nitrogen-containing ambient, or an inert gas ambient during a first curing process;
• then
• curing the UV cured flowable layer in a plasma chamber during a second curing process, wherein the plasma chamber contains an oxygen-containing ambient or a nitrogen-containing ambient;
• and
• performing sequentially and repeatedly the deposition process, the first curing process, and the second curing process until the plasma cured flowable layer fills the trench and reaches a predetermined height over a top surface of the trench.

A method of processing a substrate, comprising:

• forming a flowable layer over a bottom surface and sidewall surfaces of a trench on a substrate in a bottom-up fashion during a deposition process;
• exposing the flowable layer to UV energy to produce a UV cured flowable layer during a first curing process;
• then
• exposing the UV cured flowable layer to a plasma to produce a plasma cured flowable layer during a second curing process;
• and
• performing sequentially and repeatedly the deposition process, the first curing process, and the second curing process until the plasma cured flowable layer fills the trench and reaches a predetermined height over a top surface of the trench.