Processing method and plasma processing apparatus
AssigneeTokyo Electron Limited
InventorsMasahiro Tabata, Toru Hisamatsu
Life of this patent
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Abstract
A substrate processing method includes: selectively forming a first film on a surface of a substrate disposed in a processing container by plasma enhanced vapor deposition (PECVD); and forming a second film by atomic layer deposition (ALD) in a region of the substrate where the first film does not exist. The second film is formed by repeatedly performing a sequence including: forming a precursor layer on the surface of the substrate; purging an interior of the processing container after forming of the precursor; converting the precursor layer into the second film; and purging a space in the processing container after the converting. A plasma processing apparatus performing the method is also provided.
Claims20
A substrate processing method comprising:
- providing a substrate;
- selectively forming a first film on a surface of the substrate by plasma enhanced chemical vapor deposition (PECVD);
- and
- forming a second film in a region of the substrate where the first film does not exist,
- wherein the forming of the second film includes:
- forming a precursor layer on the surface of the substrate by supplying a gaseous precursor to the substrate,
- converting the precursor layer into the second film by exposing the precursor layer to plasma for modification of the precursor layer, and
- during the forming of the second film, a film thickness of the first film decreases.
A substrate processing method comprising:
- providing a substrate;
- etching an opening in the substrate;
- after etching of the opening, selectively forming a first film on a selective region of a surface of the substrate by plasma enhanced chemical vapor deposition (PECVD), wherein the selective region of the surface where the first film is formed includes at least surface portions outside of said opening;
- and
- forming a second film on surface portions of the substrate where the first film does not exist, wherein the surface portions of the substrate where the first film does not exist include surface portions inside of said opening,
- wherein the method includes, during forming of the second film, forming a precursor layer on the surface portions inside of said opening, by supplying a gaseous precursor to the substrate, and converting the precursor layer into the second film by exposing the precursor layer to plasma for modification of the precursor layer, and the plasma for modification of the precursor layer reduces a film thickness of the first film.
A substrate processing method comprising:
- providing a substrate in a processing container;
- etching an opening in the substrate;
- after etching of the opening, selectively forming a first film on a selective region of a surface of the substrate disposed in the processing container by plasma enhanced chemical vapor deposition (PECVD), wherein the selective region of the surface where the first film is formed includes at least surface portions outside of said opening;
- and
- forming a second film by atomic layer deposition (ALD) on surface portions of the substrate where the first film does not exist, wherein the surface portions of the substrate where the first film does not exist include surface portions inside of said opening,
- wherein the method includes, during forming of the second film, forming a precursor layer on the surface portions inside of said opening, by supplying a gaseous precursor into the processing container, purging an interior of the processing container, and converting the precursor layer into the second film by exposing the precursor layer to plasma for modification of the precursor layer in the processing container, and the plasma for modification of the precursor layer reduces a film thickness of the first film,
- wherein the second film has a film thickness that varies at different regions of the surface.
A plasma processing apparatus comprising:
- at least one processing container which receives a substrate;
- and
- a controller configured to control a processing performed on the substrate,
- wherein the controller includes a sequence performing unit which repeatedly performs a sequence including selectively forming a first film on a selective region of a surface of the substrate by using plasma enhanced chemical vapor deposition (PECVD), and forming a second film in a region of the surface where the first film does not exist,
- wherein the forming of the second film includes:
- forming a precursor layer on the surface of the substrate by supplying a gaseous precursor to the substrate,
- converting the precursor layer into the second film by exposing the precursor layer to plasma for modification of the precursor layer, and
- during the forming of the second film, a film thickness of the first film decreases.
Dependencies are inferred from the claim text.