Semiconductor package and manufacturing process thereof

A semiconductor package comprising:

• a first die encapsulated in a molding material;
• a first redistribution layer, disposed at a first side of the first die and on the molding material;
• a second redistribution layer, disposed on the molding material and disposed at a second side of the first die opposite to the first side of the first die, wherein the first die, the first redistribution layer and the second redistribution layer are electrically connected;
• and
• at least one conductive element, disposed on the second redistribution layer,
• wherein the second redistribution layer includes an outmost metallization layer having at least one contact pad and a surface coating layer, the at least one contact pad includes a concave portion exposed by the surface coating layer, and the at least one conductive element contacts the exposed concave portion of the at least one contact pad and the surface coating layer protruded from the concave portion.

A semiconductor package comprising:

• a die encapsulated in a molding material;
• a first redistribution layer, disposed at a front side of the die and on the molding material;
• and
• a second redistribution layer, disposed on the molding material and disposed at a backside side of the die, wherein the second redistribution layer includes an outmost metallization layer, an outmost dielectric layer and a surface coating layer disposed there-between, the outmost metallization layer includes at least one contact pad having a slant sidewall and a concave portion exposed from the outmost dielectric layer, and the surface coating layer on the slant sidewall includes an extended ring portion extending beyond an edge of the concave portion of the at least one contact pad.