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US 10,707,091 B2Granted
Plasma etching method and plasma etching apparatus
AssigneeTokyo Electron Limited
InventorsKeiji Kitagaito, Fumiya Kobayashi, Maju Tomura
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Abstract
A plasma etching method for plasma-etching an object including an etching target film and a patterned mask. The plasma etching method includes a first step of plasma-etching the etching target film using the mask, and a second step of depositing a silicon-containing film using plasma of a silicon-containing gas on at least a part of a side wall of the etching target film etched by the first step.
Claims8
A plasma etching method for plasma-etching an object including an etching target film and a patterned mask including a first opening, the plasma etching method comprising:
- a first step of plasma-etching the etching target film using the mask to form a second opening in the etching target film;
- and
- a second step of depositing a silicon-containing film using plasma of a silicon-containing gas on at least a part of a side wall of the etching target film etched by the first step, wherein
- as a result of the first step, a width of at least a part of the second opening of the etching target film becomes greater than a width of the first opening of the mask;
- and
- in the second step, the silicon-containing film is deposited on at least the part of the side wall such that the width of the entire second opening of the etching target film becomes closer to the width of the first opening of the mask.
3 more elements
Dependencies are inferred from the claim text.