Plasma etching method

A plasma etching method comprising:

• preparing a laminated film including a first silicon-containing film layer and a second silicon-containing film layer that is different from the first silicon-containing film layer;
• etching the laminated film with a first plasma containing fluorine and hydrogen so as to form an opening in the laminated film, and excluding bromine;
• and
• etching the laminated film with a second plasma containing bromine after etching the laminated film with the first plasma;
• wherein
• the etching with the first plasma and the etching with the second plasma are performed via a mask on the laminated film,
• unevenness is formed on a side wall of the etching opening at an interface of the first silicon-containing film layer and the second silicon-containing film layer during the etching with the first plasma, and
• the unevenness is removed during the etching with the second plasma.

A plasma etching method comprising:

• preparing a laminated film including a first silicon-containing film layer and a second silicon-containing film layer that is different from the first silicon-containing film layer in a chamber;
• supplying a first gas that contains fluorine-containing gas and hydrogen-containing gas, and excluding bromine-containing gas, into the chamber;
• and
• applying a first radio frequency power in the chamber so as to form an etching opening in the laminated film;
• supplying a second gas that contains a bromine-containing gas into the chamber;
• and
• applying a second radio frequency power in the chamber;
• wherein
• etching of the laminated film is performed via a mask on the laminated film,
• unevenness is formed on a side wall of the etching opening at an interface of the first silicon-containing film layer and the second silicon-containing film layer during the application of the first radio frequency in the chamber, and
• the unevenness is removed during the application of the second radio frequency in the chamber.