Dry etch process landing on metal oxide etch stop layer over metal layer and structure formed thereby

A method of forming a microelectronic device, comprising:

• forming a dielectric layer;
• forming a bond pad over the dielectric layer, the bond pad comprising platinum;
• forming an etch stop layer on the dielectric layer and the bond pad, the etch stop layer comprising aluminum oxide formed by atomic layer deposition, the etch stop layer being less than 10 nanometers thick;
• forming a protective overcoat on the etch stop layer;
• plasma etching an opening in the protective overcoat over the bond pad, the opening exposing the etch stop layer, the plasma etch using a fluorine containing reagent, and being free of noble gases and oxygen;
• and
• with the etch stop layer covering the bond pad, forming a wire bond to the bond pad through the etch stop layer.

A method of forming a microelectronic device, comprising:

• forming a first dielectric layer;
• forming a metal layer over the first dielectric layer;
• forming an etch stop layer over the metal layer and the first dielectric layer directly adjacent to the metal layer, the etch stop layer including a metal oxide, the etch stop layer being less than 10 nanometers thick;
• forming a second dielectric layer over the etch stop layer;
• and
• forming an etch mask over the second dielectric layer, the etch mask exposing the second dielectric layer in an area for an etched region;
• removing the second dielectric layer from the etched region by a plasma etch process which stops on the etch stop layer, the etched region extending upward from a top surface of the etch stop layer to a top surface of the second dielectric layer, and extending laterally at least partially over the metal layer;
• and
• removing a portion of the first dielectric layer so that the etched region extends below the etch stop layer.

A method of forming a microelectronic device, comprising:

• forming a first dielectric layer;
• forming a metal layer over the first dielectric layer, the metal layer comprising platinum;
• forming an etch stop layer over the metal layer and the first dielectric layer directly adjacent to the metal layer, the etch stop layer including a metal oxide;
• forming a second dielectric layer over the etch stop layer;
• removing the second dielectric layer from the etched region by a plasma etch process which stops on the etch stop layer, the plasma etch process using a fluorine containing reagent and performed without introducing noble gases or oxygen into the plasma etch process.