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US 10,707,087 B2Granted
Processing stacked substrates
AssigneeInvensas Bonding Technologies, Inc.
InventorsCyprian Emeka Uzoh, Guilian Gao
Life of this patent
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Abstract
Representative implementations provide techniques for processing integrated circuit (IC) dies and related devices, in preparation for stacking and bonding the devices. The disclosed techniques provide removal of processing residue from the device surfaces while protecting the underlying layers. One or more sacrificial layers may be applied to a surface of the device during processing to protect the underlying layers. Processing residue is attached to the sacrificial layers instead of the device, and can be removed with the sacrificial layers.
Claims21
A method of forming a microelectronic assembly, comprising:
- providing a substrate having an exposed conductive wiring layer level with or below a bonding surface of the substrate;
- coating the conductive wiring layer with one or more protective sacrificial layers;
- bonding a handle substrate to the one or more protective sacrificial layers using a temporary bonding layer;
- processing the substrate while the handle substrate is bonded to the substrate;
- removing the handle substrate;
- removing the temporary bonding layer;
- exposing the substrate, the one or more protective sacrificial layers, and a residue of the temporary bonding layer to a wet etchant for a preselected duration of time, the wet etchant decomposing at least one protective sacrificial layer, wherein the wet etchant comprises a complexing agent adapted to suppress dissolution of the conductive wiring layer;
- and
- washing said at least one protective sacrificial layer and the residue of the processing from the conductive wiring layer.
6 more elements
A method of forming a microelectronic assembly, comprising:
- providing a substrate having an exposed wiring layer level with or below a bonding surface of the substrate;
- coating the wiring layer with one or more protective sacrificial layers;
- processing the substrate;
- exposing the substrate, the one or more protective sacrificial layers, and a residue of the processing to a wet etchant for a preselected duration of time, the wet etchant decomposing at least one protective sacrificial layer;
- washing said at least one protective sacrificial layer and the residue of the processing from the wiring layer, wherein the wet etchant comprises a complexing agent adapted to suppress dissolution of the conductive wiring layer;
- and
- stacking the substrate on another substrate through a direct bonding of the wiring layer of the substrate and a surface of the other substrate.
4 more elements
A method of forming a microelectronic assembly, comprising:
- providing a substrate having an exposed conductive wiring layer level with or below a bonding surface of the substrate;
- coating the conductive wiring layer with one or more protective sacrificial layers;
- bonding a handle substrate to the one or more protective sacrificial layers using a temporary bonding layer;
- processing the substrate while the handle substrate is bonded to the substrate;
- removing the handle substrate;
- removing the temporary bonding layer;
- exposing the substrate, the one or more protective sacrificial layers, and a residue of the temporary bonding layer to an oxygen plasma radiation for a preselected duration to modify the moisture absorption characteristics of at least one of the one or more protective sacrificial layers;
- exposing the substrate, the one or more protective sacrificial layers, and the residue of the temporary bonding layer to a wet etchant for a preselected duration of time, the wet etchant decomposing at least one protective sacrificial layer, wherein the one or more protective sacrificial layers comprises an organic protective layer over the conductive wiring layer and an inorganic protective layer over the organic protective layer, the organic protective layer adapted to protect the conductive wiring layer from degradation due to removal of the inorganic protective layer and the residue;
- and
- washing said at least one protective sacrificial layer and the residue of the temporary bonding layer from the conductive wiring layer.
7 more elements
A method of forming a microelectronic assembly, comprising:
- providing a substrate having an exposed conductive wiring layer level with or below a bonding surface of the substrate;
- coating the conductive wiring layer with one or more protective sacrificial layers;
- processing the substrate;
- exposing the substrate, the one or more protective sacrificial layers, and a residue of the processing to a wet etchant for a preselected duration of time, the wet etchant decomposing at least one protective sacrificial layer, wherein the wet etchant comprises a complexing agent adapted to suppress dissolution of the conductive wiring layer.
1 more element
A method of forming a microelectronic assembly, comprising:
- providing a substrate having an exposed conductive wiring layer level with or below a bonding surface of the substrate;
- coating the conductive wiring layer with an organic sacrificial protective layer over the conductive wiring layer and an inorganic sacrificial protective layer over the organic sacrificial protective layer, the organic sacrificial protective layer adapted to protect the conductive wiring layer from degradation due to removal of the inorganic sacrificial protective layer;
- processing the substrate;
- exposing the substrate, the inorganic sacrificial protective layer, and a residue of the processing to a wet etchant for a preselected duration of time, the wet etchant decomposing at least the inorganic sacrificial protective layer without degrading, roughening, or corroding the conductive wiring layer.
1 more element
Dependencies are inferred from the claim text.