Etching methods
AssigneeApplied Materials, Inc.
InventorsYang Yang, Kartik Ramaswamy, Kenneth S. Collins, Steven Lane, Gonzalo Monroy, Lucy Zhiping Chen, Yue Guo
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Abstract
Embodiments described herein relate to apparatus and methods for performing electron beam reactive plasma etching (EBRPE). In one embodiment, an apparatus for performing EBRPE processes includes an electrode formed from a material having a high secondary electron emission coefficient. In another embodiment, methods for etching a substrate include generating a plasma and bombarding an electrode with ions from the plasma to cause the electrode to emit electrons. The electrons are accelerated toward a substrate to induce etching of the substrate.
Claims20
A method of etching a substrate, comprising:
- positioning the substrate on a pedestal disposed in a process volume of a process chamber;
- delivering a process gas to the process volume of the process chamber;
- applying low frequency RF power to an electrode formed from a metal oxide containing material or one or more of silicon containing materials, carbon containing materials, silicon-carbon containing materials, or silicon-oxide containing materials, the electrode disposed in the process volume opposite the pedestal;
- generating a plasma comprising ions in the process volume;
- bombarding the electrode with the ions to cause the electrode to emit electrons and form an electron beam;
- accelerating the electrons emitted from the electrode through the plasma toward the substrate;
- and
- etching the substrate.
A method of etching a substrate, comprising:
- positioning a substrate on a pedestal disposed in a process volume of a process chamber;
- biasing the pedestal while the substrate is positioned on the pedestal;
- delivering a process gas to the process volume;
- applying low frequency RF power to an electrode disposed in the process volume opposite the pedestal upon which the substrate is positioned;
- energizing the process gas to form a plasma in the process volume;
- biasing the electrode while the substrate is positioned opposite the electrode;
- accelerating ions from the plasma toward the electrode;
- generating an electron beam from electrons emitted from the electrode;
- and
- etching the substrate using an electron beam generated from electrons emitted from the electrode.
A method of etching a substrate, comprising:
- positioning a substrate on a pedestal disposed in a process volume of a process chamber;
- electrostatically chucking the substrate to the pedestal;
- maintaining the pedestal at ground potential;
- delivering a process gas to the process volume;
- applying RF power with a frequency of about 2 MHz to an electrode disposed in the process volume opposite the pedestal;
- energizing the process gas to form a plasma in the process volume;
- biasing the electrode;
- accelerating ions from the plasma toward the electrode;
- generating an electron beam from electrons emitted from the electrode;
- and
- etching the substrate using an electron beam generated from electrons emitted from the electrode.
Dependencies are inferred from the claim text.