Dishing prevention structures and related methods for semiconductor devices

A method of manufacturing a semiconductor device, the method comprising:

• forming a recess in a substrate;
• forming an insulating layer on the substrate and which conforms to the recess;
• forming a fill layer or layer stack comprising at least one of a semiconductor or metal on the insulating layer and which conforms to the recess;
• forming a dishing prevention layer or layer stack on the fill layer or layer stack and which conforms to the recess;
• planarizing the dishing prevention layer or layer stack and the fill layer or layer stack to confine the dishing prevention layer or layer stack and the fill layer or layer stack to the recess, wherein the planarizing stops on the insulating layer outside the recess;
• and
• forming one or more electrical contacts to the fill layer or layer stack confined to the recess.

A semiconductor device, comprising:

• a substrate;
• an isolation region comprising a dielectric material on the substrate;
• a recess in the isolation region;
• a semiconductor material confined to the recess;
• and
• an active or passive device formed in the semiconductor material and confined to the recess,
• wherein a thickness of the isolation region is reduced but greater than zero in the recess.