High aspect ratio gates
AssigneeElpis Technologies Inc.
InventorsKangguo Cheng, Sivananda K. Kanakasabapathy, Peng Xu
Life of this patent
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Abstract
Embodiments are directed to a method of forming a feature of a semiconductor device. In one or more embodiments, the feature is a gate, and the method includes forming a substrate and forming a gate material extending over a major surface of the substrate. The method further includes forming a trench extending through the gate material and into the substrate in a first direction, wherein the trench further extends through the gate material and the substrate in a second direction. The method further includes filling the trench with a fill material and forming individual gates from the gate material, wherein the individual gates extend along a third direction.
Claims13
A method of forming a semiconductor structure, the method comprising:
- forming a substrate having a major surface;
- forming a multi-layered stack over the major surface of the substrate, wherein the multi-layered stack comprises a first multi-layered stack segment, a second multi-layered stack segment, and a third multi-layered stack segment positioned between the first multi-layered stack segment and the second multi-layered stack segment;
- wherein the first multi-layered stack segment is separated from the third multi-layered stack segment by a first trench;
- and
- filling the first trench with a fill material such that the fill material physically couples the first multi-layered stack segment to the third multi-layered stack segment;
- selectively removing portions of the third multi-layered stack to form individual high aspect ratio multi-layered stack segments;
- wherein the fill material provides a sole source of support that prevents the individual high aspect ratio multi-layered segments from bending during at least some operations of the method.
A method of forming a semiconductor structure, the method comprising:
- forming a substrate having a major surface;
- forming a multi-layered stack over the major surface of the substrate, wherein the multi-layered stack comprises a first multi-layered stack segment, a second multi-layered stack segment, and a third multi-layered stack segment positioned between the first multi-layered stack segment and the second multi-layered stack segment;
- forming a first anchor extending into the multi-layered stack and positioned between the first multi-layered stack segment and third multi-layered stack segment;
- forming a second anchor extending into the multi-layered stack and positioned between the third multi-layered stack segment and the second multi-layered stack segment;
- selectively removing portions of the third multi-layered stack to form individual high aspect ratio multi-layered stack segments;
- wherein the first anchor and the second anchor provide a sole sources of support that prevent multi-layered stack segment from bending along a height dimension of the individual high aspect ratio multi-layered stack segments.
Dependencies are inferred from the claim text.