Methods for depositing thin films comprising indium nitride by atomic layer deposition
AssigneeASM International N.V.
InventorsSuvi Haukka, Viljami J. Pore, Antti Niskanen
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Abstract
Atomic layer deposition (ALD) processes for forming thin films comprising InN are provided. The thin films may find use, for example, in light-emitting diodes.
Claims26
A method for depositing a thin film comprising InN on a substrate in a reaction space by an atomic layer deposition process comprising a plurality of InN deposition cycles, each deposition cycle comprising:
- contacting the substrate with a In precursor such that no more than a single monolayer of the In precursor adsorbs on the substrate surface in a self-limiting manner;
- and
- contacting the substrate with a nitrogen precursor comprising a nitrogen (N) plasma, such that the nitrogen precursor reacts with the adsorbed In precursor to form InN, wherein the reaction space is part of a flow-type reactor.
An atomic layer deposition (ALD) process for forming an InN containing thin film on a substrate in a reaction chamber comprising a plurality of InN deposition cycles, each cycle comprising:
- providing a pulse of a first vapor phase In halide reactant into the reaction chamber to form no more than about a single molecular layer of the first reactant on the substrate;
- removing excess first reactant from the reaction chamber;
- providing a pulse of a second vapor phase N reactant to the reaction chamber such that the second vapor phase reactant reacts with the first reactant on the substrate to form InN, wherein the second vapor phase N reactant comprises N plasma;
- and
- removing excess second reactant and reaction byproducts, if any, from the reaction chamber.
An atomic layer deposition (ALD) process for forming an InN containing thin film on a substrate in a reaction chamber comprising a plurality of InN deposition cycles, each cycle comprising:
- providing a pulse of a first vapor phase in halide reactant into the reaction chamber to form no more than about a single molecular layer of the first reactant on the substrate;
- removing excess first reactant from the reaction chamber;
- providing a puke of a second reactant comprising nitrogen plasma to the reaction chamber such that the second reactant reacts with the first reactant on the substrate to form InN, and
- removing excess second reactant and reaction byproducts, if any, from the reaction chamber.
An atomic layer deposition (ALD) process for forming an InN containing thin film on a substrate in a reaction chamber comprising a plurality of deposition cycles, each cycle comprising:
- providing a pulse of a first organic In precursor into the reaction chamber to form no more than about a single molecular layer of the first reactant on the substrate;
- removing excess first reactant from the reaction chamber;
- providing a pulse of a second reactant comprising N plasma to the reaction chamber such that the second reactant reacts with the first reactant on the substrate to form InN, and
- removing excess second reactant and reaction byproducts, if any, from the reaction chamber.
Dependencies are inferred from the claim text.