Method and device for manufacturing low temperature poly-silicon, and laser assembly

A device for manufacturing low temperature poly-silicon, the device comprising:

• a table;
• a moving structure;
• and
• a laser assembly;
• wherein the table is configured to place a substrate;
• and
• wherein the moving structure is configured to drive the laser assembly and the substrate to move relative to each other gradually in a direction perpendicular to a thickness of the substrate;
• and
• wherein the laser assembly is configured to emit a laser beam, wherein the laser beam irradiates an amorphous silicon layer on the substrate, to recrystallize an amorphous silicon in a region to be irradiated with the laser beam in the amorphous silicon layer;
• and
• wherein in a direction of the substrate moving relative to the laser assembly, energy of the laser beam emitted by the laser assembly in a same period of time decreases gradually.

A laser assembly comprising:

• a laser emitter;
• and
• an optical thin film;
• wherein the laser emitter is configured to emit a laser beam with substantially uniform energy, and comprises a laser egress;
• and
• wherein the optical thin film is arranged on the laser egress, or the optical thin film is hung at one side of the laser emitter arranged with the laser egress, the laser beam emitted from the laser emitter is incident onto the optical thin film, and the optical thin film has a constant relative position to the laser emitter;
• and
• wherein from a first end of the optical thin film to a second end opposite to the first end of the optical thin film, a transmittance of the optical thin film decreases gradually, to gradually reduce the energy of a laser beam emitted by the laser assembly in a same period of time.