Method for manufacturing semiconductor device, non-transitory computer-readable recording medium, and substrate processing apparatus
AssigneeKokusai Electric Corporation
InventorsYoshimasa Nagatomi, Hirohisa Yamazaki
Life of this patent
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Abstract
By sequentially performing, a plurality of times, a step of supplying a mixed gas of an organic metal-containing source gas and an inert gas to a process chamber housing a substrate by adjusting a flow velocity of the mixed gas on the substrate to 7.8 m/s to 15.6 m/s and adjusting a partial pressure of the organic metal-containing source gas in the mixed gas to 0.167 to 0.3, a step of exhausting the process chamber, a step of supplying an oxygen-containing gas to the process chamber, and a step of exhausting the process chamber, a metal oxide film is formed on the substrate.
Claims5
A method for manufacturing a semiconductor device to form a metal oxide film on a substrate, comprising:
- sequentially performing, a cycle a plurality of times, wherein the cycle includes:
- (a) supplying a mixed gas of an organic metal-containing source gas and an inert gas to a process chamber housing the substrate by adjusting a flow velocity of the mixed gas on the substrate to 7.8 m/s to 15.6 m/s and adjusting a partial pressure of the organic metal-containing source gas in the mixed gas to 0.167 to 0.3;
- (b) exhausting the process chamber,
- (c) supplying a chlorine-containing gas to the process chamber,
- (d) supplying an oxygen-containing gas to the process chamber, and
- (e) exhausting the process chamber.
Dependencies are inferred from the claim text.