Film forming method and patterning method
AssigneeASM IP Holding B.V.
InventorsYoshio Susa, Yuko Kengoyama, Taishi Ebisudani
Life of this patent
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Abstract
Examples of a film forming method includes repeating first processing and second processing in this order a plurality of times, wherein the first processing supplies material-1 having one silicon atom per molecule onto a substrate, and then generates plasma while reactant gas is introduced, thereby forming a silicon oxide film on the substrate, and the second processing provides material-2 having two or more silicon atoms per molecule onto the substrate, and then generates plasma while no reactant gas is introduced, thereby forming a double silicon compound on the substrate.
Claims13
A film forming method for repeating first processing and second processing in this order a plurality of times, wherein the first processing supplies material-1 having one silicon atom per molecule onto a substrate, and then generates plasma while one or more species of reactant gas are introduced, thereby forming a silicon oxide film on the substrate, and the second processing provides material-2 having two or more silicon atoms per molecule onto the substrate, and then generates plasma while one or more species of reactant gas are not introduced, thereby forming a double silicon compound on the substrate.
A patterning method comprising:
- forming a spacer layer covering on a core film by repeating first processing and second processing in this order a plurality of times, the first processing supplying material-1 having one silicon atom per molecule onto a substrate and then generating plasma while introducing reactant gas flow, thereby forming a silicon oxide on the substrate, and the second processing supplying material-2 having two or more silicon atoms per molecule onto the substrate and then generating plasma without introducing any reactant gas flow, thereby forming a double silicon compound on the substrate;
- etching a part of the spacer layer to expose an upper portion of the core film;
- removing the core film while leaving the spacer layer;
- and
- etching a pattern target layer below the spacer layer utilizing the spacer layer as a mask.
Dependencies are inferred from the claim text.