Semiconductor structure with etched fin structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorShiang-Bau Wang
Life of this patent
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Abstract
Semiconductor structures are provided. The semiconductor structure includes a substrate and a first fin structure and a second fin structure formed over the substrate. The semiconductor structure further includes an isolation structure formed adjacent to the second fin structure and covering the first fin structure and a gate structure formed over the first fin structure and the second fin structure. In addition, the first fin structure is lower than the second fin structure, and the first fin structure has a curved top surface under the isolation structure.
Claims20
A semiconductor structure, comprising:
- a substrate;
- a first fin structure and a second fin structure formed over the substrate;
- an isolation structure formed adjacent to the second fin structure and covering the first fin structure;
- and
- a gate structure formed over the first fin structure and the second fin structure,
- wherein the first fin structure is lower than the second fin structure, and the first fin structure has a curved top surface under the isolation structure.
A semiconductor structure, comprising:
- a substrate;
- a first fin structure and a second fin structure formed over the substrate, wherein the second fin structure is higher than the first fin structure;
- an oxide structure covering the first fin structure;
- and
- a gate structure formed over the first fin structure and the second fin structure,
- wherein the oxide structure has a curved surface.
A semiconductor structure, comprising:
- a substrate;
- a first fin structure and a second fin structure formed over the substrate;
- an isolation structure formed around the second fin structure and covering a top surface of the first fin structure;
- and
- a gate structure formed over the first fin structure and the second fin structure,
- wherein the top surface of the first fin structure is not flat,
- wherein a center of the first fin structure is lower than an edge of the first fin structure.
Dependencies are inferred from the claim text.