Methods and systems for coating a substrate with a fluid
AssigneeTokyo Electron Limited
InventorHoyoung Kang
Life of this patent
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Abstract
Methods and systems for coating a substrate with a fluid are described. In an embodiment, a method may include receiving a substrate in a substrate processing unit, the substrate having one or more physical features formed on a surface of the substrate. The method may include introducing a gas into an environment of the surface of the substrate. Additionally, the method may include applying a fluid to the surface of the substrate, wherein the gas facilitates distribution of the fluid relative to the one or more physical features formed on the surface of the substrate. The method may further include controlling one or more processing parameters related to distribution of the fluid in order to achieve device formation objectives.
Claims20
A method comprising:
- receiving a substrate in a substrate processing unit, the substrate processing unit configured to process semiconductor devices, the substrate having one or more physical features formed on a surface of the substrate, the one or more physical features defining recesses between the one or more physical features;
- introducing a first gas into an environment of the surface of the substrate, the first gas being dissolvable into a first fluid;
- applying the first fluid to the surface of the substrate subsequent to introducing the first gas into the environment of the surface of the substrate;
- spinning the first fluid over the surface of the substrate, wherein the first gas facilitates distribution of the first fluid into the recesses defined by the one or more physical features formed on the surface of the substrate by action of the first gas dissolving into the first fluid;
- and
- controlling one or more processing parameters related to distribution of the first fluid in order to achieve device formation objectives.
A method comprising:
- receiving a substrate in a substrate processing unit, the substrate processing unit configured to process semiconductor devices, the substrate having one or more physical features formed on a surface of the substrate;
- identifying a first gas that is dissolvable into a first fluid;
- introducing the first gas into an environment of the surface of the substrate so that the first gas fills spaces between the one or more physical features formed on the substrate;
- and
- depositing the first fluid onto the surface of the substrate subsequent to introducing the first gas into the environment of the surface of the substrate, wherein the first gas dissolves into the first fluid resulting in the first fluid filling the spaces between the one or more physical features formed on the substrate without gas remaining in the spaces between the one or more physical features formed on the substrate.
A method comprising:
- receiving a substrate in a substrate processing unit, the substrate processing unit configured to process semiconductor devices by depositing films on substrate surfaces, the substrate having one or more physical features formed on a surface of the substrate, the one or more physical features defining spaces between the one or more physical features;
- introducing a solvent gas into an environment of the surface of the substrate, the solvent gas being dissolvable into a photoresist liquid;
- depositing the photoresist liquid on the surface of the substrate subsequent to introducing the solvent gas into the environment of the surface of the substrate;
- and
- spinning the photoresist liquid over the surface of the substrate, wherein the solvent gas facilitates distribution of the photoresist liquid into the spaces defined by the one or more physical features formed on the surface of the substrate by action of the solvent gas dissolving into the photoresist liquid.
Dependencies are inferred from the claim text.