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US 10,707,018 B2Granted
Polycrystalline dielectric thin film and capacitor element
AssigneeTDK Corporation
InventorsKumiko Yamazaki, Hiroshi Chihara, Yuki Nagamine, Junichi Yamazaki, Yuji Umeda
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Abstract
A polycrystalline dielectric thin film and a capacitor element have a large relative dielectric constant. The polycrystalline dielectric thin film has a perovskite oxynitride as a principal component. The perovskite oxynitride is represented by compositional formula Aa1Bb1OoNn (a1+b1+o+n=5), and the a-axis length of the crystal lattice of the perovskite oxynitride is larger than a theoretical value.
Claims12
A polycrystalline dielectric thin film, comprising a main component of a perovskite-type oxynitride,
- wherein the perovskite-type oxynitride is represented by a composition formula of Sra1Tab1OoNn (a1+b1+o+n=5),
- wherein an a-axis length of a crystal lattice of the perovskite-type oxynitride is larger than a theoretical value of a-axis length of the perovskite-type oxynitride, and
- wherein the a-axis length is 5.695 Å or more.
Dependencies are inferred from the claim text.