Spin current magnetization rotational element, spin-orbit-torque magnetoresistance effect element, magnetic memory, and high-frequency magnetic element

A spin current magnetization rotational element, comprising:

• a spin-orbit torque wiring which extends in a first direction;
• a first ferromagnetic layer which is laminated in a second direction intersecting the first direction;
• and
• a first magnetic field applying layer which is disposed to be separated from the first ferromagnetic layer in the first direction and configured to apply an assistant magnetic field to the first ferromagnetic layer, the assistant magnetic field assisting a magnetization rotation of the first ferromagnetic layer,
• wherein a surface area of the first magnetic field applying layer projected in the first direction with respect to a first surface extending along the second direction is larger than a surface area of the first ferromagnetic layer projected in the first direction with respect to the first surface.