Memory device and method of operating the same
AssigneeSK hynix Inc.
InventorsHee Joung Park, Kyeong Seung Kang, Won Chul Shin
Life of this patent
Estimating the term…
Abstract
Presented herein is a memory device and a method of operating the memory device. The memory device may include a memory cell, and a page buffer coupled to the memory cell via a bit line and configured to perform a read operation on the memory cell. The page buffer may include a storage unit configured to control a bit line precharge operation during the read operation and to store a result value of a first sensing operation. After the bit line precharge operation, a value stored in the storage unit is inverted before the storage unit stores the result value of the first sensing operation.
Claims8
A memory device comprising:
- a memory cell;
- and
- a page buffer coupled to the memory cell via a bit line, wherein the page buffer is configured to perform a read operation on the memory cell,
- wherein the page buffer comprises a storage unit configured to control a bit line precharge operation during the read operation and store a result value of a first sensing operation,
- wherein, after the bit line precharge operation, a value stored in the storage unit is inverted before the storage unit stores the result value of the first sensing operation
- wherein, the page buffer is further configured to:
- perform a bit line recovery operation after the first sensing operation, and perform a second sensing operation after the bit line recovery operation;
- wherein the storage unit is further configured to store a result value of the second sensing operation;
- and
- wherein, after the bit line recovery operation, a value stored in the storage unit is reset before the storage unit stores the result value of the second sensing operation.
Dependencies are inferred from the claim text.