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US 10,706,921 B2Granted
Integrated 1T1R RRAM memory cell
AssigneeIntel Corporation
InventorsElijah V. Karpov, Ravi Pillarisetty, Prashant Majhi, Niloy Mukherjee, Uday Shah
Life of this patent
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Abstract
One embodiment provides an apparatus. The apparatus includes a bipolar junction transistor (BJT) and an integrated resistive element. The BJT includes a base contact, a base region, a collector contact, a collector region and an integrated emitter contact. The integrated resistive element includes a resistive layer and an integrated electrode. The resistive element is positioned between the base region and the integrated emitter contact.
Claims25
An apparatus comprising:
- a bipolar junction transistor (BJT) comprising a base contact, a base region, a collector contact, a collector region and an integrated emitter contact;
- and
- an integrated resistive element comprising a resistive layer disposed proximate an integrated electrode layer, the integrated resistive element positioned between the base region and the integrated emitter contact such that at least a portion of the resistive layer is disposed proximate the base region and at least a portion of the integrated electrode layer is disposed proximate the integrated emitter contact.
A system comprising:
- a processor;
- a memory controller;
- and
- a memory array, the memory array comprising a plurality of memory cells, each memory cell comprising:
- a bipolar junction transistor (BJT) comprising a base contact, a base region, a collector contact, a collector region and an integrated emitter contact;
- and
- an integrated resistive element comprising a resistive layer and an integrated electrode, the resistive element positioned between the base region and the integrated emitter contact.
4 more elements
A memory array comprising:
- a word line, a bit line and a selector line;
- and
- a plurality of memory cells, each memory cell comprising:
- a bipolar junction transistor (BJT) comprising a base contact, a base region, a collector contact, a collector region and an integrated emitter contact;
- and
- an integrated resistive element comprising a resistive layer and an integrated electrode, the resistive element positioned between the base region and the integrated emitter contact.
3 more elements
Dependencies are inferred from the claim text.