Memory device
AssigneeSamsung Electronics Co., Ltd.
InventorsChea Ouk Lim, Tae Hui Na, Jung Sunwoo, Yong Jun Lee
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Abstract
A memory device includes: a memory cell array including a plurality of memory cells, wherein each of the plurality of memory cells includes a switching element, and a data storage element connected to the switching element, wherein the data storage element includes a phase change material; and a memory controller configured to perform a control operation with respect to a first memory cell of the plurality of memory cells by inputting an operating current to the first memory cell, and inputting a compensation current flowing from the data storage element to the switching element in the first memory cell before or after inputting the operating current to the first memory cell.
Claims19
A memory device, comprising:
- a memory cell array including a plurality of memory cells, wherein each of the plurality of memory cells includes a switching element, and a data storage element connected to the switching element, wherein the data storage element includes a phase change material;
- and
- a memory controller configured to perform a control operation with respect to a first memory cell of the plurality of memory cells by inputting an operating current to the first memory cell, and inputting a compensation current flowing from the data storage element to the switching element in the first memory cell before or after inputting the operating current to the first memory cell,
- wherein a direction in which the compensation current flows is opposite to a direction in which the operating current flows, wherein the compensation current flows from the data storage element to the switching element and the operating current flows from the switching element to the data storage element.
A memory device, comprising:
- a memory cell array including a plurality of memory cells, wherein each of the plurality of memory cells includes a first electrode, a switching element connected to the first electrode, a data storage element connected to the switching element, and a second electrode connected to the data storage element;
- and
- a memory controller configured to read data stored in a first memory cell of the plurality of memory cells by inputting a reading current to the first electrode of the first memory cell, wherein the memory controller is further configured to input a compensation current to the second electrode of the first memory cell before or after inputting the reading current, wherein the reading current flows to the data storage element from the switching element after being input to the first electrode and the compensation current flows to the switching element from the data storage element after being input to the second electrode.
A memory device, comprising:
- a memory cell array including a plurality of memory cells, wherein each of the plurality of memory cells includes a first electrode, a switching element connected to the first electrode, a data storage element connected to the switching element, and a second electrode connected to the data storage element;
- and
- a memory controller configured to store data in a first memory cell of the plurality of memory cells by inputting a program current to the first electrode of the first memory cell, wherein the memory controller is further configured to input a compensation current to the second electrode of the first memory cell after inputting the program current, wherein the program current flows to the data storage element from the switching element after being input to the first electrode and the compensation current flows to the switching element from the data storage element after being input to the second electrode.
Dependencies are inferred from the claim text.