Cell-specific referenece generation and sensing
AssigneeMicron Technology, Inc.
InventorsChristopher John Kawamura, Scott James Derner
Life of this patent
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Abstract
Methods, systems, and devices for operating a ferroelectric memory cell or cells are described. A portion of charge of a memory cell may be captured and, for example, stored using a capacitor or intrinsic capacitance of the memory array that includes the memory cell. The memory cell may be recharged (e.g., re-written). The memory cell may then be read, and a voltage of the memory cell may be compared to a voltage resulting from the captured charge. A logic state of the memory cell may be determined based at least in part on the voltage comparison.
Claims20
A method comprising:
- capturing, using a first digit line of a first ferroelectric memory cell, a first voltage from the first ferroelectric memory cell;
- storing a second voltage using a capacitor of the first ferroelectric memory cell, wherein the second voltage is a function of the first voltage;
- comparing the first voltage with the second voltage;
- and
- determining a logic state of the first ferroelectric memory cell based at least in part on the comparing the first voltage with the second voltage.
A method comprising:
- transferring a first voltage from a ferroelectric capacitor of a first ferroelectric memory cell to a digit line of a second ferroelectric memory cell;
- transferring a second voltage from the ferroelectric capacitor of the first ferroelectric memory cell to a digit line of the first ferroelectric memory cell;
- and
- comparing the first voltage on the digit line of the second ferroelectric memory cell to the second voltage on the digit line of the first ferroelectric memory cell.
A method comprising:
- capturing, using a first digit line of a first ferroelectric memory cell, a first voltage from the first ferroelectric memory cell;
- transferring the first voltage from the first digit line of the first ferroelectric memory cell to a second digit line of a second ferroelectric memory cell;
- storing the first voltage on the second digit line of the second ferroelectric memory cell;
- storing a second voltage using a capacitor of the first ferroelectric memory cell, wherein the second voltage is a function of the first voltage;
- comparing the first voltage with the second voltage;
- and
- determining a logic state of the first ferroelectric memory cell based at least in part on comparing the first voltage with the second voltage.
Dependencies are inferred from the claim text.