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US 10,706,905 B1Granted
Single path memory sense amplifier circuit
AssigneeGlobalfoundries Inc.
InventorsYentsai Huang, Chunsung Chiang, Wuyang Hao, Jack T. Wong, Lejan Pu
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Abstract
The present disclosure generally relates to semiconductor structures and, more particularly, to a single path memory sense amplifier circuit and methods of manufacture. The circuit includes a sense amplifier circuit comprising a plurality of self-aligned transistors in a single sensing path; and a memory array connected to the sense amplifier circuit by the single sensing path.
Claims20
A circuit, comprising:
- a sense amplifier circuit comprising a plurality of self-aligned transistors in a single sensing path;
- a memory array connected to the sense amplifier circuit by the single sensing path;
- and
- a timer connected to the single sensing path at a location between the sense amplifier circuit and the memory array, and configured to select individual resistive devices in the memory array.
1 more element
A circuit, comprising:
- a sense amplifier circuit configured to operate in an idle phase, a local bias setting phase and a sense phase and comprising a p-type transistor and an n-type transistor arranged in a single sensing path;
- a plurality of resistive devices accessed by the single sensing path to read data bits stored therein;
- and
- a timer and a multiplexer connected to the single sensing path at a location between the sense amplifier circuit and the plurality of resistive devices,
- wherein the timer is preprogrammed to select individual ones of the plurality of resistance devices.
2 more elements
A method, comprising:
- applying voltages to bias a sense amplifier circuit to operate in an idle phase, a local bias setting phase and a sense phase;
- accessing a memory array connected to the sense amplifier circuit by a single sensing path during the local bias setting phase and the sense phase;
- and
- selecting individual memory elements in the memory array based on timing signals coupled to the single sensing path by a timer coupled to the single sensing path at a point between the sense amplifier circuit and the memory array.
1 more element
Dependencies are inferred from the claim text.