Nonvolatile memory cell, memory cell unit, and information writing method, and electronic apparatus

A nonvolatile memory cell, comprising:

• a layered structure body comprising:
• a storage layer configured to store information in based on a magnetization direction;
• and
• a magnetization fixed layer configured to define the magnetization direction of the storage layer;
• and
• a heating layer configured to:
• heat the magnetization fixed layer;
• and
• control a magnetization direction of the magnetization fixed layer, wherein
• the heating layer includes at least a part of the magnetization fixed layer,
• heating layers that constitute a respective nonvolatile memory cell of a plurality of nonvolatile memory cells are connected by heating layer extended portions respectively in a group of the plurality of nonvolatile memory cells arrayed along a first direction of an array of the plurality of nonvolatile memory cells, and
• the heating layer extended portions have a layer structure same as a layer structure of the heating layer.

An information writing method in a memory cell unit, the information writing method comprising:

• controlling a magnetization direction of a magnetization fixed layer by heating the magnetization fixed layer, wherein
• the memory cell unit comprises an array of a plurality of nonvolatile memory cells in a two-dimensional matrix in a first direction and a second direction different from the first direction,
• each nonvolatile memory cell of the plurality of nonvolatile memory cells comprises:
• a layered structure body comprising the magnetization fixed layer and a storage layer configured to store information based on a magnetization direction of the storage layer;
• and
• a heating layer configured to heat the magnetization fixed layer,
• the magnetization fixed layer is configured to define the magnetization direction of the storage layer,
• the heating layer includes at least a part of the magnetization fixed layer,
• heating layers that constitute a respective nonvolatile memory cell of the plurality of nonvolatile memory cells are connected by heating layer extended portions respectively in a group of the plurality of nonvolatile memory cells arrayed along the first direction,
• the heating layer extended portions have a layer structure same as a layer structure of the heating layer, and
• the magnetization fixed layer is heated by making current flow in the heating layer and the heating layer extended portions;
• and
• writing, in the storage layer, information based on the magnetization direction of the magnetization fixed layer.

An electronic apparatus, comprising:

• a memory cell unit, wherein the memory cell unit comprises:
• an array of a plurality of nonvolatile memory cells in a two-dimensional matrix in a first direction and a second direction different from the first direction,
• wherein each nonvolatile memory cell of the plurality of nonvolatile memory cells comprises:
• a layered structure body comprising:
• a storage layer configured to store information based on a magnetization direction;
• and
• a magnetization fixed layer configured to define the magnetization direction of the storage layer;
• and
• a heating layer configured to:
• heat the magnetization fixed layer;
• and
• control a magnetization direction of the magnetization fixed layer based on the heated magnetization fixed layer, wherein
• the heating layer includes at least a part of the magnetization fixed layer,
• heating layers that constitute a respective nonvolatile memory cell of the plurality of nonvolatile memory cells are connected by heating layer extended portions respectively in a group of the plurality of nonvolatile memory cells arrayed along the first direction, and
• the heating layer extended portions have a layer structure same as a layer structure of the heating layer.