Estimation of effective channel length for FinFETs and nano-wires

A method for enhancing simulations of three-dimensional transistors, comprising the steps of:

• accessing, by a computer system, a data set describing a dopant profile of a three-dimensional transistor having a semiconductor body, the data set also identifying a gate length for the three-dimensional transistor which is no greater than 20 nm, the data set further identifying surfaces of gate dielectric material adjacent to the semiconductor body, the data set further describing source/drain dopant concentration within each of a plurality of sub-volumes within the semiconductor body;
• identifying, by the computer system, containing boundaries of the channel in dependence upon the surfaces of gate dielectric material adjacent to the semiconductor body as identified in the data set;
• estimating, by the computer system, an effective volume V and a cross-sectional area A of the channel of the three-dimensional transistor in dependence upon the dopant profile within the containing boundaries as described in the data set, including summing all of the sub-volumes which are within the containing boundaries and whose source/drain dopant concentration is below a predetermined value;
• estimating, by the computer system, an effective channel length in the three-dimensional transistor in dependence upon the effective volume V and the cross-sectional area A;
• and
• providing the estimated effective channel length for simulation of an aspect of the three-dimensional transistor.

A non-transitory computer readable medium having stored thereon a plurality of software code portions defining logic for enhancing simulations of three-dimensional transistors, the software code portions defining logic for:

• providing, to a computer system, a data set describing a dopant profile of a three-dimensional transistor having a semiconductor body, the data set also identifying a gate length for the three-dimensional transistor which is no greater than 20 nm, the data set further identifying surfaces of gate dielectric material adjacent to the semiconductor body, the data set further describing source/drain dopant concentration within each of a plurality of sub-volumes within the semiconductor body;
• identifying containing boundaries of the channel in dependence upon the surfaces of gate dielectric material adjacent to the semiconductor body as identified in the data set;
• estimating an effective volume V and a cross-sectional area A of the channel of the three-dimensional the transistor in dependence upon the dopant profile within the containing boundaries as described in the data set, including summing all of the sub-volumes which are within the containing boundaries and whose source/drain dopant concentration is below a predetermined value;
• estimating an effective channel length in the three-dimensional transistor in dependence upon the effective volume V and the cross-sectional area A;
• and
• providing the estimated effective channel length for simulation of an aspect of the three-dimensional transistor.

A system for enhancing simulations of three-dimensional transistors, for use with a computer system having accessibly thereto a data set describing a dopant profile of a three-dimensional transistor having a semiconductor body, the data set also identifying a gate length for the three-dimensional transistor which is no greater than 20 nm, the data set further identifying surfaces of gate dielectric material adjacent to the semiconductor body, the data set further describing source/drain dopant concentration within each of a plurality of sub-volumes within the semiconductor body, the system comprising:

• means for identifying containing boundaries of the channel in dependence upon the surfaces of gate dielectric material adjacent to the semiconductor body as identified in the data set;
• means for estimating an effective volume V and a cross-sectional area A of the channel of the three-dimensional transistor in dependence upon the dopant profile within the containing boundaries as described in the data set, including summing all of the sub-volumes which are within the containing boundaries and whose source/drain dopant concentration is below a predetermined value;
• means for estimating an effective channel length in the three-dimensional transistor in dependence upon the effective volume V and the cross-sectional area A;
• and
• means for providing the estimated effective channel length for simulation of an aspect of the three-dimensional transistor.