Self-optimizing circuits for mitigating total ionizing dose effects, temperature drifts, and aging phenomena in fully-depleted silicon-on-insulator technologies

A self-optimizing circuit for a primary fully-depleted silicon-on-insulator (FD-SOI) device having a buried oxide layer (BOX) and a primary well disposed beneath the BOX, the self-optimizing circuit comprising:

• a static biasing circuit configured to supply a first bias;
• a total ionizing dose (TID) dosimeter comprising a dosimeter FD-SOI device, wherein the TID dosimeter is configured to generate a dosimeter voltage representing parametric shifts in the primary FD-SOI device;
• a reference circuit configured to supply a reference voltage;
• an amplifier coupled to the TID dosimeter and the reference circuit, wherein the amplifier is configured to supply a second bias at an output of the static biasing circuit, and wherein the second bias is proportional to a difference between the dosimeter voltage and the reference voltage;
• a voltage source configured to generate a drive voltage to which the first bias and the second bias are referenced;
• and
• a feedback circuit configured to regulate supply of the drive voltage applied to a well of the dosimeter FD-SOI device based on a combination of the first bias and the second bias.