Adaptive chamber matching in advanced semiconductor process control

A computer-implemented method for controlling chamber-to-chamber variability during manufacturing of a device on wafers, the method comprising:

• for each current chamber in a multi-chamber processing platform,
• obtaining a spatial model for a wafer, wherein the spatial model is created by a first machine-learning engine based on a first set of metrology data on one or more dimensions of interest in the device;
• obtaining one or more parameters of the current chamber;
• using the spatial model and the one or more parameters of the current chamber to predict spatial measurements of the one or more dimensions of interest in the device across the wafer;
• obtaining reference spatial measurements of the one or more dimensions of interest in the device across the wafer, wherein the reference spatial measurements are obtained by processing the device in a reference chamber;
• comparing the predicted spatial measurements with the reference spatial measurements to produce a metric indicating variation of performance between the current chamber and the reference chamber;
• and
• recommending, based on a multi-constraint optimization of the metric performed by a second machine-learning engine, adjustments for at least some of the one or more parameters of the current chamber, so that a performance of the current chamber substantially matches a performance of the reference chamber.