Negative-working photoresist compositions for laser ablation and use thereof

A process comprising steps A, B, C and D:

• A coating on a substrate a composition for a negative tone, aqueous base developable, broadband UV resist which is also sensitive in the areas exposed to broadband irradiation to subsequent cold laser ablation by an UV Excimer Laser emitting at 308 nm wherein, said composition consists of components of type a-1), b-1), c-1) a solvent, d-1) a surfactant and e-1) an inhibitor;
• wherein:
• a-1) are components for imparting negative tone, aqueous base developable, broadband UV resist behavior comprised of
• (i) is at least one polymeric resin comprising a structure of the following formula:
• wherein each of R1b-R5b is independently selected from the group consisting of H, F and CH3, R6b is selected from the group consisting of a substituted aryl, unsubstituted aryl, substituted heteroaryl and unsubstituted heteroaryl group;
• R7b is a substituted or unsubstituted benzyl group;
• R8b is selected from the group consisting of a linear or branched C2-C10 hydroxy alkyl group and a C2-C10 hydroxy alkyl acrylate;
• R9b is an acid cleavable group, v=10-40 mole %, w=0-35 mole %, x=0-60 mole %, y=10-60 mole % and z=0-45 mole %,
• (ii) is one or more free radical initiators activated by actinic radiation, and
• (iii) is one or more crosslinkable acrylated monomers capable of undergoing free radical crosslinking wherein the acrylate functionality is greater than 1;
• b-1) is a cold laser ablation excimer laser sensitizer component system consisting of (II);
• wherein R3 is selected from the group consisting of hydrogen, an alkyl group, an alkylenefluoroalkyl group, an alkylene aryl group, and an alkyleneoxyalkyl group and X is selected from the group consisting of Cl, Br or I;
• and further wherein said cold laser ablation excimer laser sensitizer component system comprises from 2 to 10 wt % of the composition, and wherein the composition is one which can be coated to a thickness from 30 to 60 microns,
• B cross-linking part of the coating by irradiation with broadband UV exposure through a mask;
• C developing the coating with aqueous base removing the unexposed areas of the coating, thereby forming a first pattern;
• D forming a second pattern in the first pattern by cold laser ablating of the first pattern with a UV excimer laser emitting at 308 nm.