Display device including an oxide semiconductor which overlaps an opening

A display device comprising:

• a first substrate including:
• a first insulating substrate;
• a gate line located above the first insulating substrate and extending in a first direction;
• a first light-shielding layer extending in the first direction and overlapping the gate line;
• a first source line and a second source line crossing the gate line and arranged in the first direction;
• a switching element having an oxide semiconductor located between the first light-shielding layer and the gate line;
• and
• a first pixel electrode located between the first source line and the second source line;
• and
• a second substrate including:
• a second insulating substrate;
• and
• a second light-shielding layer located below the second insulating substrate and having a first opening and a second opening, wherein
• the first opening and the second opening are arranged in a second direction crossing the first direction between the first source line and the second source line,
• the gate line and the first-light-shielding layer are between the first opening and the second opening,
• the oxide semiconductor has a first portion and a second portion,
• the first portion is connected to the first pixel electrode and crosses the gate line and the first light-shielding layer,
• the second portion is connected to the second source line and overlaps the first opening, and
• the first pixel electrode overlaps the second opening.