Wafer-level high aspect ratio beam shaping

A light-emitting device, comprising:

• a semiconductor substrate;
• a surface-emitting semiconductor light source on the semiconductor substrate;
• a first dielectric, transparent to light emitted by the light source, comprising a saddle-shaped lens over an aperture of the light source, the saddle-shaped lens reshaping a beam of light emitted by the light source to have a high aspect ratio;
• and
• a second dielectric, transparent to light emitted by the light source, encapsulating a light emission surface of the saddle-shaped lens;
• wherein:
• the second dielectric has a higher refractive index than the first dielectric.

A light-emitting device, comprising:

• a set of one or more semiconductor die;
• a set of surface-emitting semiconductor light sources on the set of one or more semiconductor die, the set of surface-emitting semiconductor light sources including a first light source and a second light source;
• a first saddle-shaped lens connecting a first pair of micro-lenses, the first saddle-shaped lens disposed over a first aperture of the first light source;
• and
• a second saddle-shaped lens connecting a second pair of micro-lenses, the second saddle-shaped lens disposed over a second aperture of the second light source;
• and
• a dielectric, transparent to light emitted by the first light source and the second light source, encapsulating light emission surfaces of the first saddle-shaped lens and the second saddle-shaped lens;
• wherein:
• each of the first saddle-shaped lens and the second saddle-shaped lens reshapes a beam of light emitted by the first light source or the second light source to have a high aspect ratio;
• the first saddle-shaped lens has a different angular orientation than the second saddle-shaped lens;
• and
• the dielectric has a higher refractive index than the first saddle-shaped lens and the second saddle-shaped lens.