Antireflection film, optical device, and production method for antireflection film
AssigneeSeiko Epson Corporation
InventorKazuyuki Miyashita
Life of this patent
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Abstract
An antireflection film includes a light shielding layer which is placed on a substrate and contains an electrical conductor, a first transmission layer which is placed on the light shielding layer and contains a dielectric, a semi-transmission layer which is placed on the first transmission layer and contains an electrical conductor, and a second transmission layer which is placed on the semi-transmission layer and contains a dielectric, wherein the light shielding layer and the semi-transmission layer have a larger extinction coefficient than the first transmission layer and the second transmission layer.
Claims11
An antireflection film, comprising:
- a light shielding layer which is placed on a substrate and contains an electrical conductor;
- a first transmission layer which is placed on the light shielding layer and contains a dielectric;
- a semi-transmission layer which is placed on the first transmission layer and contains an electrical conductor;
- and
- a second transmission layer which is placed on the semi-transmission layer and contains a dielectric,
- wherein the light shielding layer and the semi-transmission layer have a larger extinction coefficient than the first transmission layer and the second transmission layer,
- the first transmission layer is an aluminum oxide layer having a thickness of 70 nm or more and 90 nm or less,
- the semi-transmission layer is a titanium layer having a thickness of 9 nm or more and 12 nm or less, and
- the second transmission layer is an aluminum oxide layer having a thickness of 60 nm or more and 80 nm or less.
Dependencies are inferred from the claim text.