US 10,705,040 B2 · Sensing layer formation

Abstract

We disclose herein a method for heating a gas sensing material formulation on a microhotplate which comprises: a dielectric membrane formed on a semiconductor substrate comprising an etched portion; and the gas sensing material formulation being located on one side of the dielectric membrane. The method comprising: selectively heating the gas sensing material formulation using an infra-red (IR) heater located over the substrate, and controllably cooling the semiconductor substrate using a cooling baseplate provided under the substrate and using an insulating medium located between the substrate and the cooling base plate so that a gas sensing structure is formed on said one side of the dielectric membrane from the gas sensing material formulation.

Claims18

Dependent claims

A method for heating a gas sensing material formulation on a micro-hotplate comprising:

forming a dielectric membrane on a semiconductor substrate that includes an etched portion;
and
disposing the gas sensing material formulation on one side of the dielectric membrane;
the method comprising:
selectively heating the gas sensing material formulation using an infra-red (IR) heater located over the substrate, and
controllably cooling the semiconductor substrate using a cooling plate positioned under the substrate and using a thermally insulating medium located between the substrate and the cooling plate so that a gas sensing structure is formed on said one side of the dielectric membrane from the gas sensing material formulation, wherein
the thermally insulating medium extends under non-etched portions of the substrate.

4 more elements

A method for forming a gas sensing structure from a gas sensing material formulation on a micro-hotplate comprising:

forming a dielectric membrane on a semiconductor substrate that includes an etched portion;
growing or depositing the gas sensing material formulation on one side of the dielectric membrane;
and
selectively heating the gas sensing material formulation using an infra-red (IR) heater located over the substrate, and
controllably cooling the semiconductor substrate using a cooling plate provided under the substrate and using a thermally insulating medium located between the substrate and the cooling plate so that a gas sensing structure is formed on said one side of the dielectric membrane from the gas sensing material formulation, wherein
the thermally insulating medium extends under non-etched portions of the substrate.

3 more elements

Dependencies are inferred from the claim text.

Sensing layer formation

Life of this patent

Sensing layer formation

Life of this patent

Abstract

Claims18