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US 10,704,163 B2Granted
Silicon carbide substrate and method for manufacturing the same
AssigneeSumitomo Electric Industries, Ltd.
InventorKyoko Okita
Life of this patent
Estimating the term…
Abstract
A method for manufacturing a silicon carbide substrate includes steps of preparing a silicon carbide substrate having a main surface, polishing the main surface of the silicon carbide substrate using a polishing agent containing a metal catalyst, and cleaning the silicon carbide substrate after the step of polishing. The step of cleaning includes a step of cleaning the silicon carbide substrate with aqua regia.
Claims4
A silicon carbide substrate having a main surface,
- the main surface having a surface roughness (Ra) of less than or equal to 0.1 nm, and
- vanadium, tungsten, molybdenum, platinum, nickel, titanium, zirconium, and chromium each having a concentration of less than or equal to 1.0×1012 atoms/cm2 in the main surface,
- wherein molybdenum has a concentration of more than or equal to 1.0×106 atoms/cm2 in the main surface.
Dependencies are inferred from the claim text.