Electrochemical plating

A method comprising:

• receiving a property of a substrate including at least one of a sheet resistance of the substrate or a surface current measurement of the substrate;
• determining at least one of a current function or a voltage function for electroplating of the substrate based on the received property, such that a peak entry current applied to the substrate substantially matches a plating current applied to the substrate following the peak entry current;
• and
• controlling an electrical current provided to a plating solution according to the at least one of the current function or the voltage function, wherein the plating solution is used to deposit a material layer on the substrate.

A method comprising:

• determining a wafer electrical property associated with a wafer, wherein the wafer electrical property affects the wafer during an electrochemical plating (ECP) process and the wafer electrical property includes at least one of a surface current of the wafer or a sheet resistance of the wafer;
• adjusting a process parameter to be applied to the wafer during the ECP process based on the determined wafer electrical property, such that a peak entry current of the ECP process substantially matches a plating current of the ECP process induced following the peak entry current, wherein the process parameter specifies at least one of a current or a voltage;
• and
• controlling the adjusted process parameter specifying the at least one of the current or the voltage to the wafer undergoing the ECP process.