Laminated film and flexible electronic device

A laminated film comprising:

• a flexible base material;
• a first thin film layer formed directly on at least one of surfaces of the base material;
• and
• a second thin film layer formed on the first thin film layer,
• wherein the first thin film layer contains a silicon atom (Si), an oxygen atom (O) and a carbon atom (C), the second thin film layer contains a silicon atom, an oxygen atom and a nitrogen atom (N), and the first thin film layer and the second thin film layer are formed by using glow discharge plasma, wherein the flexible base material includes resin or a composite material containing resin, and wherein in a silicon distribution curve, an oxygen distribution curve, and a carbon distribution curve respectively showing a relationship between a distance from a surface of the first thin film layer in a thickness direction of the first thin film layer and a ratio of number of silicon atoms (atomic number ratio of silicon), a ratio of number of oxygen atoms (atomic number ratio of oxygen), and a ratio of number of carbon atoms (atomic number ratio of carbon), relative to a total number of the silicon atoms, the oxygen atoms and the carbon atoms contained in the first thin film layer at a point situated at the distance, the laminated film satisfies all of the following conditions (i) to (iii):
• (i) the atomic number ratio of silicon, the atomic number ratio of oxygen and the atomic number ratio of carbon satisfy a condition represented by the following formula (1) in a region of 90% or more in the thickness direction of the first thin film layer:
• (Atomic number ratio of oxygen)>(Atomic number ratio of silicon)>(Atomic number ratio of carbon) (1)
• (ii) the carbon distribution curve has at least one extreme, and
• (iii) an absolute value of a difference between a maximum value and a minimum value of the atomic number ratio of carbon in the carbon distribution curve is 0.05 or more;
• and
• wherein a thickness of the second thin film layer is 80 nm or more, and silicon atoms and oxygen atoms are contained in a depth range up to 40 nm in the thickness direction toward inside the second thin film layer from a surface of the second thin film layer, and an atomic number ratio of nitrogen atoms to silicon atoms within the depth range up to 40 nm in the thickness direction toward inside the second thin film layer from a surface of the second thin film layer is represented by the following formula (3):
• N/Si≤0.2 (3), and
• wherein in the second thin film layer, an average atomic number ratio of the number of nitrogen atoms to the total number of silicon atoms, oxygen atoms, nitrogen atoms and carbon atoms falls within the range of 0.40 to 0.80.