In-situ CVD and ALD coating of chamber to control metal contamination
AssigneeApplied Materials, Inc.
InventorsSultan Malik, Srinivas D. Nemani, Qiwei Liang, Adib Khan, Maximillian Clemons
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Abstract
Embodiments of the systems and methods herein are directed towards forming, via ALD or CVD, a protective film in-situ on a plurality of interior components of a process chamber. The interior components coated with the protective film include a chamber sidewall, a chamber bottom, a substrate support pedestal, a showerhead, and a chamber top. The protective film can be of various compositions including amorphous Si, carbosilane, polysilicon, SiC, SiN, SiO2, Al2O3, AlON, HfO2, or Ni3Al, and can vary in thickness from about 80 nm to about 250 nm.
Claims20
A method of processing a substrate, comprising:
- introducing at least one gas to a process chamber;
- removing, in response to the introducing of the at least one gas in the process chamber, a first protective film from a plurality of interior components of the process chamber;
- forming, via ALD or CVD, in the process chamber, a second protective film on the plurality of interior components comprising a chamber sidewall, a chamber bottom, a substrate support pedestal, a showerhead, and a chamber top;
- and
- positioning, subsequent to forming the second protective film, a substrate on the substrate support pedestal, wherein the substrate is in contact with a portion of the substrate support pedestal that does not comprise the second protective film.
A method of protecting a process chamber, comprising:
- introducing at least one gas to a process chamber;
- removing, in response to the introducing of the at least one gas in the process chamber, a first protective film from a plurality of interior components of the process chamber;
- forming, via ALD or CVD, in the process chamber, a second protective film on the plurality of interior components, wherein the second protective film comprises amorphous Si, carbosilane, polysilicon, SiC, SiN, SiO2, Al2O3, AION, HfO2, or Ni3Al;
- and
- positioning, subsequent to forming the second protective film, a substrate on a substrate support pedestal.
A method of processing a substrate, comprising:
- introducing at least one gas to a process chamber;
- removing, in response to the introducing of the at least one gas in the process chamber, a first protective film from a plurality of interior components of the process chamber;
- forming, via ALD or CVD, in the process chamber, a second protective film on the plurality of interior components comprising a chamber sidewall, a chamber bottom, a substrate support pedestal, a showerhead, and a chamber top, wherein the second protective film comprises amorphous Si, carbosilane, polysilicon, SiC, SiN, SiO2, Al2O3, AION, HfO2, or Ni3Al;
- and
- positioning, subsequent to forming the second protective film, a substrate on the substrate support pedestal, wherein the second protective film is not formed on a portion of the substrate support pedestal and the substrate is in contact with the portion of the substrate support pedestal that does not comprise the second protective film.
Dependencies are inferred from the claim text.