Plasma chamber target for reducing defects in workpiece during dielectric sputtering

A process chamber, comprising:

• a chamber body defining an interior volume;
• a substrate support to support a substrate within the interior volume;
• a plurality of targets to be sputtered onto the substrate including at least one dielectric target and at least one metallic target, wherein the dielectric target comprises a dielectric compound having a predefined average grain size ranging from approximately 65 μm to 200 μm;
• and
• a shield coupled to the chamber body and having at least one hole to expose at least one of the plurality of targets to be sputtered.

A method for performing physical vapor deposition in a process chamber, the method comprising:

• selecting a first target in a process chamber and depositing a dielectric compound on a workpiece via the first target, wherein the compound has a predefined average grain size ranging from approximately 65 μm to 200 μm;
• selecting a second target in the process chamber and depositing a metal over the compound on the workpiece via the second target;
• and
• preparing the process chamber for a subsequent workpiece.