Polishing composition for silicon oxide film
AssigneeKao Corporation
InventorsHaruhiko Doi, Koji Kinuta
Life of this patent
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Abstract
Provided is a polishing composition for a silicon oxide film that can improve the speed of polishing a silicon oxide film. In one or more embodiments, a polishing composition for a silicon oxide film contains: water; a cerium oxide particle; and a compound having in its molecule an amino group and at least one acid group selected from a sulfonic acid group and a phosphonic acid group. In the polishing composition, [the number of moles of the acid group contained in the compound]/[total surface area of the cerium oxide particle] is in a range from 1.6×10−5 mol/m2 to 5.0×10−2 mol/m2.
Claims6
A polishing composition for a silicon oxide film, comprising:
- water;
- a cerium oxide particle;
- and
- a compound having in its molecule an amino group and a phosphonic acid group,
- wherein a ratio of the number of moles of the acid group contained in a specific volume of the compound to a total surface area of the cerium oxide particle ([the number of moles of the acid group contained in the compound]/[total surface area of the cerium oxide particle]) is in a range from 1.6×10−5 mol/m2 to 5.0×10−2 mol/m2,
- wherein a pH of the polishing composition is in a range from 3.0 to 8.0, and
- wherein the compound is aminomethylphosphonic acid.
A method for producing a semiconductor substrate, comprising forming a film consisting of silicon oxide on a silicon wafer and polishing the silicon oxide film using a polishing composition,
- the polishing composition for a silicon oxide film, comprising:
- water;
- a cerium oxide particle;
- and
- a compound having in its molecule an amino group and a phosphonic acid group,
- wherein a ratio of the number of moles of the acid group contained in a specific volume of the compound to a total surface area of the cerium oxide particle ([the number of moles of the acid group contained in the compound]/[total surface area of the cerium oxide particle]) is in a range from 1.6×10−5 mol/m2 to 5.0×10−2 mol/m2,
- wherein a pH of the polishing composition is in a range from 3.0 to 8.0, and
- wherein the compound is aminomethylphosphonic acid.
A method for polishing a semiconductor substrate, comprising polishing a film consisting of silicon oxide film using a polishing composition,
- the polishing composition for a silicon oxide film, comprising:
- water;
- a cerium oxide particle;
- and
- a compound having in its molecule an amino group and a phosphonic acid group,
- wherein a ratio of the number of moles of the acid group contained in a specific volume of the compound to a total surface area of the cerium oxide particle ([the number of moles of the acid group contained in the compound]/[total surface area of the cerium oxide particle]) is in a range from 1.6×10−5 mol/m2 to 5.0×10−2 mol/m2,
- wherein a pH of the polishing composition is in a range from 3.0 to 8.0, and
- wherein the compound is aminomethylphosphonic acid.
Dependencies are inferred from the claim text.