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US 10,703,915 B2Granted
Compositions and methods for the deposition of silicon oxide films
AssigneeVersum Materials US, LLC
InventorsXinjian Lei, Meiliang Wang, Matthew R. MacDonald, Richard Ho, Manchao Xiao, Suresh Kalpatu Rajaraman
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Abstract
Described herein are compositions and methods for forming silicon oxide films. In one aspect, the film is deposited from at least one silicon precursor compound, wherein the at least one silicon precursor compound is selected from the following Formulae A and B: as defined herein.
Claims26
A method of depositing a film comprising silicon and oxygen onto a substrate, the method comprising the steps of:
- a) providing a substrate in a reactor;
- b) introducing into the reactor at least one silicon precursor compound, wherein the at least one silicon precursor compound is selected from the group consisting of Formulae A and B:
- wherein
- R1 is independently selected from the group consisting of a linear C1 to C10 alkyl group, a branched C3 to C10 alkyl group, a C3 to C10 cyclic alkyl group, a C3 to C10 heterocyclic group, a C3 to C10 alkenyl group, a C3 to C10 alkynyl group, and a C4 to C10 aryl group;
- R2 is selected from the group consisting of hydrogen, a C1 to C10 linear alkyl group, a branched C3 to C10 alkyl group, a C3 to C10 cyclic alkyl group, a C3 to C10 heterocyclic group, a C3 to C10 alkenyl group, a C3 to C10 alkynyl group, and a C4 to C10 aryl group, wherein R1 and R2 in Formula A or B are either linked to form a cyclic ring structure or are not linked to form a cyclic ring structure;
- R3-8 are each independently selected from the group consisting of hydrogen, a linear C1 to C10 alkyl group, a branched C3 to C10 alkyl group, a C3 to C10 cyclic alkyl group, a C2 to C10 alkenyl group, a C2 to C10 alkynyl group, and a C4 to C10 aryl group;
- X is selected from the group consisting of hydrogen, a linear C1 to C10 alkyl group, a branched C3 to C10 alkyl group, a C3 to C10 cyclic alkyl group, a C2 to C10 alkenyl group, a C2 to C10 alkynyl group, and a C4 to C10 aryl group, wherein R1 and R9 are either linked to form a cyclic ring or are not linked to form a cyclic ring, and wherein both of R3 and R4 are not hydrogen;
- c) purging the reactor with purge gas;
- d) introducing an oxygen-containing source into the reactor;
- and
- e) purging the reactor with purge gas,
- wherein steps b through e are repeated until a desired thickness of the film is deposited, and
- wherein the method is conducted at one or more temperatures ranging from about 600° C. to about 800° C.
10 more elements
A method of depositing a film comprising silicon and oxygen onto a substrate comprises steps of:
- a) providing a substrate in a reactor;
- b) introducing into the reactor at least one silicon precursor compound, wherein the at least one silicon precursor compound is selected from the group consisting of Formulae A and B:
- wherein
- R1 is independently selected from the group consisting of a linear C1 to C10 alkyl group, a branched C3 to C10 alkyl group, a C3 to C10 cyclic alkyl group, a C3 to C10 heterocyclic group, a C3 to C10 alkenyl group, a C3 to C10 alkynyl group, and a C4 to C10 aryl group;
- R2 is selected from the group consisting of hydrogen, a C1 to C10 linear alkyl group, a branched C3 to C10 alkyl group, a C3 to C10 cyclic alkyl group, a C3 to C10 heterocyclic group, a C3 to C10 alkenyl group, a C3 to C10 alkynyl group, and a C4 to C10 aryl group, wherein R1 and R2 in Formula A or B are either linked to form a cyclic ring structure or are not linked to form a cyclic ring structure;
- and
- R3-8 and X are methyl;
- c) purging the reactor with purge gas;
- d) introducing an oxygen-containing source into the reactor;
- and
- e) purging the reactor with purge gas,
- wherein steps b through e are repeated until a desired thickness of the film is deposited, and
- wherein the method is conducted at one or more temperatures ranging from about 600° C. to about 800° C.
10 more elements
Dependencies are inferred from the claim text.