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US 10,703,627 B2Granted
Methods of fabricating semiconductor structures including cavities filled with a sacrificial material
AssigneeSoitec
InventorsMariam Sadaka, Ludovic Ecarnot
Life of this patent
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Abstract
Methods of forming semiconductor structures comprising one or more cavities, which may be used in the formation of microelectromechanical system (MEMS) transducers, involve forming one or more cavities in a first substrate, providing a sacrificial material within the one or more cavities, bonding a second substrate over a surface of the first substrate, forming one or more apertures through a portion of the first substrate to the sacrificial material, and removing the sacrificial material from within the one or more cavities. Structures and devices are fabricated using such methods.
Claims13
A method of fabricating a semiconductor structure, comprising:
- forming one or more cavities in a first substrate, the one or more cavities extending at least partially into the first substrate from a first major surface of the first substrate, the one or more cavities having a total sum cross-sectional area in a plane parallel to the first major surface of the first substrate of at least thirty percent (30%) of a total area encompassed by a peripheral edge of the first substrate at the first major surface of the first substrate;
- providing a sacrificial material comprising a polymer or a glass within the one or more cavities;
- depositing a first bonding layer over the first major surface of the first substrate and over the sacrificial material within the one or more cavities;
- implanting ions into a second substrate to form a fracture plane within the second substrate, the fracture plane disposed between a relatively thick layer of the second substrate and a relatively thin layer of the second substrate;
- depositing a second bonding layer on a first major surface of the second substrate;
- bonding the second bonding layer of the second substrate to the first bonding layer of the first substrate using a direct bonding process;
- fracturing the second substrate along the fracture plane and separating the relatively thick layer of the second substrate from the relatively thin layer of the second substrate and leaving the relatively thin layer of the second substrate bonded over the first major surface of the first substrate;
- forming one or more apertures through the relatively thin layer of the second substrate;
- and
- removing the sacrificial material from within the one or more cavities out through the one or more apertures.
7 more elements
A method of fabricating a semiconductor structure, comprising:
- forming one or more cavities in a first substrate, the one or more cavities extending at least
- partially into the first substrate from a first major surface of the first substrate, the one or more cavities having a total sum cross-sectional area in a plane parallel to the first major surface of the first substrate of at least thirty percent (30%) of a total area encompassed by a peripheral edge of the first substrate at the first major surface of the first substrate;
- forming a liner material on or in surfaces of the first substrate within the one or more cavities, the liner material comprising a layer of silicon oxide and a layer of silicon nitride;
- providing a sacrificial material within the one or more cavities;
- depositing a first bonding layer over the first major surface of the first substrate and over the sacrificial material within the one or more cavities;
- implanting ions into a second substrate to form a fracture plane within the second substrate, the fracture plane disposed between a relatively thick layer of the second substrate and a relatively thin layer of the second substrate;
- depositing a second bonding layer on a first major surface of the second substrate;
- bonding the second bonding layer of the second substrate to the first bonding layer of the first substrate using a direct bonding process;
- fracturing the second substrate along the fracture plane and separating the relatively thick layer of the second substrate from the relatively thin layer of the second substrate and leaving the relatively thin layer of the second substrate bonded over the first major surface of the first substrate;
- forming one or more apertures through the relatively thin layer of the second substrate;
- and
- removing the sacrificial material from within the one or more cavities out through the one or more apertures.
9 more elements
Dependencies are inferred from the claim text.